text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 5,775,000

On Order:Order inventroy details 483,000
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 3,000
Multiple Of: 3,000
Quantity Web Price
3,000 $0.0341
12,000 $0.033
30,000 $0.0324
75,000 $0.0317
120,000+ $0.0314
Total:

$102.30

USD
Attributes
Attributes Table
Fet Type P-Ch
Drain-to-Source Voltage [Vdss] 25V
Drain-Source On Resistance-Max 1.5Ω
Rated Power Dissipation 0.35|W
Qg Gate Charge 1.5nC
Features and Applications

The FDV304P is a 25 V 1.5 Ω P-Channel enhancement mode field effect transistors is produced using  high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions.

Features:

  • -25 V, -0.46 A continuous, -1.5 A Peak.
  • RDS(ON) = 1.1 Ω @ VGS = -4.5 V,
  • RDS(ON) = 1.5 Ω @ VGS= -2.7 V.
  • Very low level gate drive requirements allowing direct operation in 3 V 
  • Gate-Source Zener for ESD ruggedness.
  • 6 kV Human Body Model.
  • Compact industry standard SOT-23 surface mount package

Applications:

  • Battery power applications
  • Notebook computers
  • Cellular phones