|Drain-to-Source Voltage [Vdss]||60V|
|Drain-Source On Resistance-Max||0.028Ω|
|Rated Power Dissipation||80|W|
|Qg Gate Charge||43nC|
Features and Applications
The STP45NF06 is a devices are an N-channel Power MOSFET realized with the latest development of STMicroelectronis unique "single feature size" strip-based process.
The resulting transistors show extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Exceptional dv/dt capability
- Standard threshold drive
- 100% avalanche tested
- Switching application