$2.68 USD Each
$7.00 reeling fee is amortized over the number of components for each reel. Mini-Reels are a custom product and are non-cancelable and non-returnable.
|Memory Organization||64 K x 16|
|Supply Voltage-Nom||3V to 3.6V|
Features and Applications
The CY7C1021DV33-10ZSXIT is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable [CE(bar)] and Write Enable [WE(bar)] inputs LOW. If Byte Low Enable [BLE(bar)] is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15).
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected [CE(bar) HIGH], the outputs are disabled [OE(bar) HIGH], the BHE(bar) and BLE(bar) are disabled [BHE(bar), BLE(bar) HIGH], or during a Write operation [CE(bar) LOW, and WE(bar) LOW]. The CY7C1021DV33 is available in Pb-free 44-pin 400-Mil wide Molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages.
- Temperature ranges
- Industrial: –40 °C to 85 °C
- Automotive-A: –40 °C to 85 °C
- Pin-and function-compatible with CY7C1021CV33
- High speed
- tAA = 10 ns
- Low active power
- ICC = 60 mA @ 10 ns
- Low CMOS standby power
- ISB2 = 3 mA
- 2.0 V data retention
- Automatic power-down when deselected
- CMOS for optimum speed/power
- Independent control of upper and lower bits
- Available in Pb-free 44-pin 400-Mil wide molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages