text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 787

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $1.60
30 $1.45
125 $1.39
300 $1.36
1,250+ $1.30
Total:

$1.60

USD
Attributes
Attributes Table
Memory Density 256kb
Memory Organization 32 K x 8
Supply Voltage-Nom 5V
Access Time-Max 10ns
Temperature Grade Industrial
Features and Applications

The CY7C199D is a high performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE) and tri-state drivers.

This device has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A14).

Features:

  • Temperature ranges
    • –40 °C to 85 °C
  • Pin and function compatible with CY7C199C
  • High speed
    • tAA = 10 ns
  • Low active power
    • ICC = 80 mA at 10 ns
  • Low CMOS standby power
    • ISB2 = 3 mA
  • 2.0 V data retention
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed/power
  • Transistor-transistor logic (TTL) compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • Available in Pb-free 28-pin 300-Mil-wide molded small outline J-lead package (SOJ) and 28-pin thin small outline package (TSOP) I packages