text.skipToContent text.skipToNavigation

Manufacturer Part #

QSB363ZR

QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1903
Product Specification Section
Technical Attributes
Attributes Table
Wavelength: 940nm
Angle of Half Sensitivity: ±12°
Power Dissipation: 75mW
CE Voltage-Max: 30V
Package Style:  T-3/4
Mounting Method: Surface Mount
Features & Applications

The QSB363ZR is a Subminiature plastic silicon infrared phototransistor encapsulated in a black infrared transparent. Available in T-3/4 package.

Features:

  • NPN silicon phototransistor
  • T-3/4 (2 mm) surface mount package
  • Medium wide beam angle 24°
  • Black plastic package
  • Matched emitters: QEB363 or QEB373
  • Daylight filter
  • Tape & Reel option (See tape & Reel specifications)
  • Lead form options: Gullwing, Yoke, Z-Bend

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Consumer Appliances

View the Available QSB Series of Photodetectors

Pricing Section
Stock:
4,000
Minimum Order:
1,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$205.00
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1,000+
$0.205
Product Variant Information section