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Manufacturer Part #

QSD123

QSD123 Series 30 V 880 nm Plastic Silicon Infrared Phototransistor - T-1 3/4

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1923
Product Specification Section
Technical Attributes
Attributes Table
Wavelength: 880nm
Angle of Half Sensitivity: ±12°
Power Dissipation: 100mW
CE Voltage-Max: 30V
Collector Current @ 25C: 4mA
Package Style:  T-1 3/4
Mounting Method: Through Hole
Features and Applications

The QSD123 is a 100 mW 30 V 880 nm Plastic Silicon Infrared Phototransistor. It comes in a Package of T-1 3/4 and Operating temperature ranges from -40 °C to 100 °C.

Features:

  • NPN Silicon Phototransistor
  • Package Type: T-1 3/4
  • Notched Emitter: QED12X/QED22X/QED23X
  • Narrow Reception Angle: 24°C
  • Daylight Filter
  • Package Material and Color: Black Epoxy
  • High Sensitivity

Applications:

  • Automation
  • Building & Home Controls
  • Medical Electronics/Devices
  • Home Audio System Components
  • Consumer Appliances

View the QSD12 Series of Phototransistor

Pricing Section
Stock
3,778
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.19
USD
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Quantity
Web Price
1
$0.188
250
$0.18
1,000
$0.17
2,500
$0.163
10,000+
$0.153
Product Variant Information section