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Manufacturer Part #

QSE122

QSE122 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Wavelength: 880nm
Angle of Half Sensitivity: ±25°
Power Dissipation: 100mW
CE Voltage-Max: 30V
Collector Current @ 25C: 3mA
Mounting Method: Through Hole
Features and Applications

The QSE122 is a 30 V 880 nm, Through Hole Plastic Silicon Infrared Phototransistor. Its Operating temperature ranges from -40 °C to 100 °C.

Features:

  • NPN Silicon Phototransistor
  • Package Type: Sidelooker
  • Medium wide reception angle, 50°
  • Package material and color: black epoxy
  • Matched emitter: QEE113
  • Daylight filter
  • High sensitivity

Applications:

  • Automation
  • Building & Home Controls
  • Medical Electronics/Devices
  • Home Audio System Components
  • Consumer Appliances

View the QSE1 Series of Phototransistors

Pricing Section
Stock
0
Minimum Order:
3,500
Multiple Of:
500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$770.00
USD
Quantity
Web Price
500
$0.23
1,500
$0.22
2,500
$0.22
5,000
$0.215
10,000+
$0.21
Product Variant Information section