Vishay Intertechnology’s SiHP065N60E N-channel MOSFET, part of its latest generation of 600V E series power MOSFETs, can help developers to achieve high energy efficiency in power factor correction circuits and hard-switched DC-DC converter topologies.
Built using Vishay’s latest energy-efficient E series superjunction technology, the SiHP065N60E features low maximum on-resistance at a 10V gate-source voltage of 0.066Ω, some 30% lower than that of previous 600V E series MOSFETs. The new superjunction technology also produces a reduction in gate charge: at 49nC at 10V, it is 44% lower than in the earlier E series devices.
This means that the figure of merit of the SiHP065N60E, the product of the on-resistance and gate charge, is 25% lower than that of the closest competing MOSFET in the same class.
The MOSFET is rated for a maximum continuous drain current of 25A at a case temperature of 100°C.