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Vishay Intertechnology’s SiHP065N60E N-channel MOSFET, part of its latest generation of 600V E series power MOSFETs, can help developers to achieve high energy efficiency in power factor correction circuits and hard-switched DC-DC converter topologies.

Built using Vishay’s latest energy-efficient E series superjunction technology, the SiHP065N60E features low maximum on-resistance at a 10V gate-source voltage of 0.066Ω, some 30% lower than that of previous 600V E series MOSFETs. The new superjunction technology also produces a reduction in gate charge: at 49nC at 10V, it is 44% lower than in the earlier E series devices.

This means that the figure of merit of the SiHP065N60E, the product of the on-resistance and gate charge, is 25% lower than that of the closest competing MOSFET in the same class.

The MOSFET is rated for a maximum continuous drain current of 25A at a case temperature of 100°C.

  • Low effective output capacitances improve switching performance
  • Withstands transient over-voltages in the avalanche mode with limits guaranteed through 100% UIS testing
  • 5V maximum gate-source threshold voltage
  • 0.5°C/W maximum junction-to-case thermal resistance
  • 1.2V maximum drain-source body diode
  • forward voltage
  • Telecoms equipment
  • Enterprise power systems
  • High-intensity discharge lighting
  • Fluorescent ballast lighting
  • Welding equipment
  • Motor drives
  • Battery chargers
  • Solar inverters



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